Technical Name Development Project for Gallium Nitride (GaN) Power Semiconductor Technology in High-Efficiency Power over Ethernet (PoE) Switches and Power Electronic Products
Project Operator Infinity Comm. Tech. Inc.
Project Host 何俊穎
Summary
This GaN HEMT-based PoE power module integrates Totem-Pole PFC and a high-frequency GaN CLLC architecture, delivering 500 W output, 92% conversion efficiency, and 16 W/in³ power density. Its high-speed switching, low-loss operation, and compact design reduce power loss and cooling demand for networking equipment in AI data center racks.
Scientific Breakthrough
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Industrial Applicability
Using GaN devices to reduce losses in multi-stage AC/DC and DC/DC conversion, this technology improves efficiency, power density, and dynamic response. It is suitable for PoE switches, AI server racks, semiconductor processing equipment, high-efficiency networking power supplies, and high-power industrial electronic systems.
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  • Eddy He