Technical Name GaN HEMT and PCSEL integrated laser light source for advanced Lidar application.
Project Operator National Yang Ming Chiao Tung University
Project Host 盧廷昌
Summary
We developed GaN HEMTs, 940 nm and 1550 nm PCSELs, and integrated light-source circuits combining GaN current drivers, gate drivers, passive components, and lasers. Using flip-chip bonding, we demonstrated a high-density, high-speed (<5 ns, >50 MHz), high-power SoP pulsed laser source. We also realized monolithic integration of a PCSEL and metasurface hologram, achieving a footprint about 2450× smaller than commercial dot projectors while reducing power consumption to 71.3%.
Scientific Breakthrough
The key innovation of this research is the development of next-generation electronic and photonic technologies, including high-current, high-speed GaN HEMTs, 940/1550 nm photonic crystal surface-emitting lasers (PCSELs), and metasurfaces. Through advanced circuit design and flip-chip heterogeneous integration on high-thermal-conductivity AlN substrates, a System-on-Package (SoP) LiDAR laser source is realized, enabling high-power, high-speed, and compact solid-state LiDAR systems for advanced sensing applications.
Industrial Applicability
光達為自駕車、機器人與智慧感測之關鍵技術。本計畫整合GaN HEMT、新世代PCSEL及超穎介面開發光學相位陣列,開發長距離、高速、低功耗之固態光達光源。透過先進封裝,實現高可靠度、小型化及低成本光達模組,應用於智慧駕駛、工業自動化及3D感測。研究成果可延伸至AR/VR、光電元件與智慧製造。
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  • Fang, Hsiang wen
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