We developed GaN HEMTs, 940 nm and 1550 nm PCSELs, and integrated light-source circuits combining GaN current drivers, gate drivers, passive components, and lasers. Using flip-chip bonding, we demonstrated a high-density, high-speed (<5 ns, >50 MHz), high-power SoP pulsed laser source. We also realized monolithic integration of a PCSEL and metasurface hologram, achieving a footprint about 2450× smaller than commercial dot projectors while reducing power consumption to 71.3%.

The key innovation of this research is the development of next-generation electronic and photonic technologies, including high-current, high-speed GaN HEMTs, 940/1550 nm photonic crystal surface-emitting lasers (PCSELs), and metasurfaces. Through advanced circuit design and flip-chip heterogeneous integration on high-thermal-conductivity AlN substrates, a System-on-Package (SoP) LiDAR laser source is realized, enabling high-power, high-speed, and compact solid-state LiDAR systems for advanced sensing applications.

LiDAR is a key technology for autonomous vehicles, robotics, and intelligent sensing. This project integrates GaN HEMTs, photonic crystal surface-emitting lasers (PCSELs), and metasurface to develop compact, long-range, high-speed, solid-state LiDAR light sources. Through advanced packaging, reliable compact LiDAR modules will be realized for autonomous driving, industrial automation, and 3D sensing. The technologies can be extended to AR/VR and smart manufacturing applications.