Ultra-low-thermal-budget Cu/Dielectric hybrid bonding using area-selective metal passivation technology was developed based on diffusion theories. Metal passivation can achieve an ultra 120°C bonding temperature, even near room temperature under certain condition, with excellent bonding strength. Both Cu/SiO₂ and Cu/Polymer hybrid bonding were further demonstrated with the advantages of dishing compensation, excellent electrical characteristics (10⁻⁹ Ω·cm²), and JEDEC-qualified reliability.

By integrating Ag/Au passivation and area-selective technologies, this technology can be applied to both Cu/SiO₂ and Cu/polymer hybrid bonding platforms. Through the suppression of Cu oxidation, the bonding temperature can be reduced to 120°C or even near room temperature, while enabling ultra-fast bonding within 10 seconds. The technology demonstrates excellent electrical performance with ultra-low contact resistance (10⁻⁹ Ω·cm²) and has successfully passed reliability verification.

This technology applies area-selective metal passivation layers to both Cu/SiO₂ and Cu/polymer hybrid bonding platforms, significantly reducing the bonding temperature to 120°C. In addition to lowering thermal budget and mitigating stress-induced warpage, it also enhances electrical reliability, further increasing system I/O density and operating speed. The technology is well suited for next-generation 3D IC and advanced packaging technologies required for AI and HPC systems.