Driven by the urgent need for high-performance embedded NVM in HPC, AI, and IoT, this project introduces FinFET Dielectric RRAM (FinD RRAM), a mask-free memory fully compatible with advanced FinFET CMOS logic. By using the existing metal-gate oxide dielectric as the switching layer, FinD RRAM enables low power, fast operation, high reliability, and scalable 1.5T NOR/1D1R arrays, offering a cost-effective and highly manufacturable solution for next-generation embedded memory.

FinD RRAM is the first mask-free RRAM verified on TSMC 167nm, 7nm, and 5nm FinFET logic platforms, using the native gate dielectric as the switching layer. Compared with conventional 2T NOR cells, CPODE-enabled 1.5T reduces cell area by 25%, while the built-in Schottky diode enables 1D1R crosspoint arrays with 0.5T-equivalent density. With high speed, low power, and strong reliability, it benchmarks favorably against embedded NVM and opens paths to CIM, AI, and RNG.

FIND RRAM has been verified in TSMC 16/7/5nm FinFET CMOS logic processes without extra masks, special materials, or custom process steps, enabling low-risk industrial adoption. Its scalable 1.5T NOR and 1D1R high-density arrays improve memory density and area efficiency, making it highly suitable for logic eNVM, code storage, CPU/AI memory, and next-generation embedded SoC applications.