| Technical Name | Deposition of Metal-Organic Framework Thin Films for Low-k Devices | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | 康敦彥 | ||
| Summary | This technology uses ALD-derived metal oxide layers as metal sources and adhesion templates, followed by vapor-phase or solution-phase conversion to form wafer-scale MOF low-k thin films for advanced semiconductor dielectric applications. |
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| Scientific Breakthrough | - |
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| Industrial Applicability | This technology is applicable to BEOL low-k dielectrics, insulating layers, barrier layers, and advanced packaging, with potential to reduce RC delay, leakage current, and power consumption in wafer-level semiconductor integration. |
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