Technical Name Deposition of Metal-Organic Framework Thin Films for Low-k Devices
Project Operator National Taiwan University
Project Host 康敦彥
Summary
This technology uses ALD-derived metal oxide layers as metal sources and adhesion templates, followed by vapor-phase or solution-phase conversion to form wafer-scale MOF low-k thin films for advanced semiconductor dielectric applications.
Scientific Breakthrough
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Industrial Applicability
This technology is applicable to BEOL low-k dielectrics, insulating layers, barrier layers, and advanced packaging, with potential to reduce RC delay, leakage current, and power consumption in wafer-level semiconductor integration.
  • Contact
  • Dun-Yen Kang