Phosphorus ion implantation into undoped Ga₂O₃ grown by MOCVD, followed by optimized annealing, yields p-type conductivity confirmed by Hall measurements. An n-type Ga₂O₃ layer is then epitaxially regrown, enabling fabrication of a lateral PN homojunction diode. These results confirm that phosphorus implantation is a reliable method for forming stable p-type Ga₂O₃, offering a viable path for future oxide semiconductor device applications.

Phosphorus ion implantation is applied to undoped Ga₂O₃ epilayers grown by MOCVD. By adjusting the implantation energy, ion dose, and annealing temperature, p-type Ga₂O₃ is obtained and verified via Hall measurements. An n-type Ga₂O₃ layer is then epitaxially regrown on the p-type film, enabling the fabrication of a lateral PN homojunction diode. These results confirm that phosphorus ion implantation is an effective method to realize stable p-type conductivity in Ga₂O₃.

Over the past two years, our first-principles simulations identified phosphorus as a viable dopant for p-type Ga₂O₃. We found that phosphorus-related defect formation energies are low, prompting experimental studies using ion implantation. The successful formation of p-type Ga₂O₃ was confirmed and published in Materials Today Advances (2023). Device-level validation, including in-situ doping and various structures, confirms that stable, high-quality p-Ga₂O₃ is achievable.