1. Develop novel air-stable hexameric tin oxide inorganic photoresists and establish a patent platform.
 2. New EUV resists meet goals in pitch, energy, and line edge, nearing commercial standards.
 3. Create hybrid methods to enhance film thickness and edge resistance.
 4. Fabricate 20-nm resolution interference masks for EUV lithography.

1.New EUV resists: HP = 13–16 nm; J = 30–60 mJ/cm²; LWR = 5–7 nm.
 2.EBL patterns: 800 μC/cm² rHP = 17 nm, CD = 15 nm, and LWR = 5.6 nm.
 3 .A 12-tin oxide cluster increases film thickness by 2.5× and doubles edge resistance.
 4.An inorganic resist platform is superior to native commercial molecules. EUV validation will be completed by the PSI center.

Inorganic photoresists are superior materials in EUV-lithography when IC-manufactire is moving toward 1.4 nm. or even smaller. Relative small thickness (20-30 nm) of inorganic The edge resistance of inorganic photoresists are larger than orhanic materials by 2-3 folds. This thickness feature ensures a secure development of lithography patterns.