This technology is based on fluorite-structured hafnium–zirconium oxide (HfZrO₂) for pyroelectric energy harvesting (PEH). Under thermal gradients, it enables efficient energy recovery through entropy conversion. Leveraging both ferroelectric (FE) and antiferroelectric (AFE) properties, the material also exhibits piezoelectric and pyroelectric effects. Through opposite-polarity electric field cycling, complete fatigue recovery is achieved, significantly extending device lifetime. The goal is to advance its potential applications in 3D packaging, 3D-stacked chips, and backside power delivery network (BSPDN) technologies.

Overcoming the limitations of conventional water cooling and passive cooling components for solving heat dissipation in semiconductor devices, this technology leverages the pyroelectric properties of emerging fluorite-structured hafnium–zirconium oxide (HfZrO₂) to achieve highly efficient energy conversion. The optimized antiferroelectric device demonstrates a harvestable energy density of 10.37 J/cm³. With a self-recovery mechanism, it sustains over 10¹² cycles without performance degradation, and the theoretical model is validated through atomic-scale material analysis.

This technology solves the growing heat dissipation challenges caused by continuous scaling in advanced semiconductor processes by developing fluorite-structured hafnium–zirconium oxide (HfZrO₂) devices for thermoelectric energy harvesting applications. The material exhibits both ferroelectric and antiferroelectric properties, ensuring high compatibility with advanced process technologies, and demonstrates strong potential for applications with severe heat concentration issues, such as 3D packaging, 3D-stacked chips, and backside power delivery network (BSPDN).