Technical Name |
A novel high-performance Sn-doped gallium oxide thin-film nitric oxide gas sensor for applications in smart healthcare and environmental monitoring |
Project Operator |
National Chung Hsing University |
Project Host |
武東星 |
Summary |
1. The β-Ga₂O₃(Sn) nanorod thin film fabricated in this study exhibits a rapid response time of 2 seconds, an efficient recovery time of 4 seconds, and a detection limit of 30 ppb for nitric oxide (NO) gas.
2. The doping ratio of tin (Sn) causes the nanostructure of β-Ga₂O₃ to gradually transform from a rod-like to a spindle-like morphology.
3. Post-annealing under an oxygen atmosphere improves the gas sensing mechanism. |
Scientific Breakthrough |
1. The β-Ga₂O₃ (Sn) nanorod thin film fabricated in this study exhibits a rapid response time of 2 seconds, an efficient recovery time of 4 seconds, and a detection limit of 30 ppb for nitric oxide (NO) gas.
2. The doping ratio of tin (Sn) causes the nanostructure of β-Ga₂O₃ to gradually transform from a rod-like to a spindle-like morphology.
3. Post-annealing under an oxygen atmosphere improves the gas sensing mechanism. |
Industrial Applicability |
1. In modern medical diagnostics, exhaled breath analysis plays a vital role. Fractional exhaled nitric oxide (FeNO) levels typically range from 25 to 80 ppb, with levels exceeding 50 ppb considered elevated in asthma patients. This technique can be applied in asthma monitoring and smart healthcare devices.
2. It is also applicable to environmental sensing modules for use in automotive exhaust control, emission detection and the monitoring of explosive gases in various industrial fields. |
Keyword |
nitric oxide gas sensor gas sensing gallium oxide β-Ga2O3 Sn-doped nanorod nano-rod high aspect ratio oxygen vacancy |