We report scalable architectures of Ge quantum-dots (QDs) using CMOS processes. Our QDs feature controllability, reproducibility, and scalability in size, morphology and position, creating a novel portfolio of quantum photonic and computing devices for manufacturing. We have demonstrated the first examples of Ge-QD SHTs operation at room temperature, double-QDs qubits operation at T > 10 K, and integration of SiN waveguided Ge photonics for on-chip optical interconnect and green computing.

We have pioneered rigorous nanofabrication on producing self-assembled Ge quantum dots with spherical shape, size tunability, and self-organized confinement-barriers at designated spatial locations. 
 
 We pioneered engineering breakthroughs in Ge quantum computing and photonic devices such as double-QDs qubits and single-hole transistor for high-temperature operation as well as integration of Ge light-emitters and photodetectors with SiN waveguide, all the while using mainstream CMOS technology.

From lab to fab is the driving force of our research team.
 
 Our CMOS integrable Ge qubits technology offers great promises for manufacturable semiconductor qubits operating at high temperatures and has gained tsmc and Metak interests.
 
 Our Ge QD technology is recognized for paving a promising and seminal route to achieve a key goal of Si photonic integrated circuits. Armed with our Ge quantum-dot technology, we hope to pave the way for a quantum leap for Taiwan＇s ICT industry.