This technology focuses on enhancing ferroelectric memory by improving device interfaces, optimizing operation timing, and incorporating self-tracking circuits. These strategies extend device endurance and reduce performance loss. At the same time, various thin film structures compatible with back-end processes are developed to improve thermal stability, enabling faster and more reliable write operations. Together, these advancements address both manufacturing challenges and future application needs.

The innovation lies in providing a holistic solution that spans process, operation, and circuit design. By introducing interface treatments, optimized recovery timing, and supporting circuit mechanisms, the technology significantly boosts FeFET memory reliability while minimizing time-related degradation. Additionally, comparative studies on different thin-film structures show that solid-solution films maintain stability and enable faster write operations, marking a scientific breakthrough for advanced memory.

This technology addresses the growing demand for low-power, high-reliability non-volatile memory, making it particularly valuable for emerging Edge-AI applications. By integrating solutions for both front-end and back-end processes and introducing innovative materials, the approach demonstrates strong scalability and mass-production potential. It offers a practical pathway to accelerate the deployment of next-generation semiconductor applications across logic, memory, and heterogeneous integration.