Technical Name EUV Micro Detector Array (MDA) Mechanism and Development
Project Operator National Tsing Hua University
Project Host 林崇榮
Summary
The Micro-Detector Array (MDA) aims to monitor the uniformity of dosage in various processes, including EUV, DUV, e-Beam, and Ion-Beam. The MDA is capable to measure critical dimensions, image log slope, and pattern edge location. Meanwhile, MDA is fully compatible with logic process, which provides advantages of high contrast in intensity, wide dynamic range, built-in calibration, and instant WAT analysis. These features enable the MDA to monitor process parameter variation.
Scientific Breakthrough
Micro-Detector Array (MDA) can monitor the uniformity of dosage, critical dimensions, image log slope, and pattern edge location. MDA is fully compatible with the FinFET logic process, providing high contrast in intensity, wide dynamic range, built-in calibration, and instant WAT analysis.
Industrial Applicability
The MDA is able to measure critical information for optimizing FinFET lithography beyond 5nm. It is expected to be integrated into the detection modules of EUV scanner equipment, such as ASML, and enhance the accuracy and reliability of lithography processes. The real-time monitoring of EUV intensity inside vacuum chambers and wireless signal transmission allow corrective measures to be taken immediately.
Keyword Extreme Ultraviolet (EUV), Deep Ultraviolet (DUV) Electron-Beam (E-Beam) Lithography Voltage Coupled Floating Gate FinFET Wireless signal Sensing module On-chip antenna
Notes
  • Contact
  • Wei Chang