A single-die testing system using the B1505A evaluated probe landing position, repeated contacts, scratch length, and triboelectric charging, improving measurement accuracy and efficiency. Devices underwent short-circuit tests, with LTSPICE and TCAD simulations analyzing temperature-induced failure mechanisms, followed by optical and SEM failure analysis.

The scientific breakthroughs of this work include:
 (1) reducing measurement time while minimizing variations between tests, thereby establishing a measurement methodology that effectively enhances accuracy;
 (2) conducting device short-circuit test analysis through both simulation and experiments to verify the electrical impact of defects and the structural damage induced.

The High-Power Device Testing System maps electrical characteristics across a bare die to determine the optimal probe position. LTSPICE models predict short-circuit I-V behavior and internal temperatures to identify device limits. Industrial adoption can improve bare-die testing accuracy and efficiency and anticipate packaged device performance, preventing damage.