Our GIQC features engineering advantages of accurate control over the spatial placement, spherical shapes and tunable sizes of Ge QDs using CMOS approach. Our proposed Ge-QDs array approach offers a multi-dimensional parameter space for engineering qubits and sensors for high-temperature operation with scalability and reconfigurability, as evidenced by characteristic gate-controlled hexagonal-shaped charge states and Coulomb blockade stability diagram.

Our GIQC features engineering advantages of accurate control over the spatial placement, spherical shapes and tunable sizes of Ge QDs using CMOS approach. Our Ge double quantum-dots/Si barrier and Ge QD/SiN single-hole transistor are able to operate in few-hole regime at T > 10 K in terms of characteristic gate-controlled hexagonal-shaped charge states and Coulomb blockade stability diagram.

Quantum computing is envisaged to solve certain types of data-massive problems (AI, cryptography, big data, materials, and medicine) that cannot be achieved by using classical computers alone. A fully CMOS implementation of semiconductor qubits is an appealing solution to achieve large-scale, commercial quantum computers by leveraging robust CMOS manufacturing and advanced IC technologies.