• Technical Name
  • Industrialized synthesis technique of high quality and ultra-large area graphene
  • Operator
  • National Central University
  • Booth
  • Online display only
  • Contact
  • 蘇清源
  • Email
  • cysu@ncu.edu.tw
Technical Description In this technique, we develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. In R2RCVD, in order to grow large-scale graphene in economic furnace tube, rolling the copper foil combined with quartz scaffold and isolated layer to overcome the problem of copper foil adhesion in high temperature. Furthermore, the optimized condition of gas flow rate, temperature, distance, and time have been found. By adopting our technique, a large-area graphene with an area of 5×100 cm2 can be obtained, domain size about 20 μm, sheet resistance only 750 Ω / sq, ID/IG radio 0.3, I2D/IG radio 0.9, defect density 2.43×1012 cm-2,and its charge carrier mobility ~1000 cm2V-1s-1. This invention can produce ultra large graphene with high-quality. It adopts simple operation and economic reaction components to increase the output of batch production of graphene to meet the needs of industrialization and marketization.
Scientific Breakthrough The equipment of roll-to-roll technology for growing large-area graphene developed by Samsung or Sony is expensive and the control of parameters must be very precise.
The breakthrough of our technology is that the existing equipment is used to obtain the most effective synthetic area. The high-density winding and batch to batch method with the special insulating layer proposed by our technology can be used to grow graphene on a large scale and has good quality. The sheet resistance is about 750 Ω/sq, the defect density is about 2.43×1012 cm-2. When the furnace tube diameter reaches 8 inches, the yield can be increased from 5.3 m2/h (reported in the literature of roll-to-roll method) to 6.7 m2/h.
Industrial Applicability 1. Graphene has high light transmittance (light transmittance of single-layer graphene is 97%), high thermal and electrical conductivity and flexibility, which is suitable for ultra-high transparent conductive film.
2. Single layer graphene is quite sensitive to the change of surface charge transfer, and the surface is also easy to be chemically modified. It can be combined with circuit design to develop biosensor device with extremely high sensitivity.
3. The transfer of large-area graphene to the silicon substrate can enhance the epitaxial growth of GaN to on its surface and be applied to specific niche electronic devices.