| Technical Name | Field Effect Transistors using Topological Insulators | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | - | ||
| Summary | This invention provides a transistor with 2D topological insulators as channel material. By designing novel transistor structures, we forced electrons transport through bulk of topological insulator. Via simulating the bandstructure of topological insulator (ex: SnF), the effective mass was obtained. Afterward, the transistor’s ballistic current was calculated. |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | |||
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