Co-developed by TSRI and Macronix, this novel 3D Dynamic Random Access Memory (3D DRAM) architecture provides a high-bandwidth and high-density memory solution specifically designed for Artificial Intelligence (AI) chips.

Utilizing new materials (Indium Oxide) and a capacitor-less structure combined with low-temperature manufacturing technology, it significantly increases memory density while drastically improving power consumption performance.

Highly competitive globally, this research leads major manufacturers in the US, Japan, and Korea. It secures Taiwan's leading position in next-generation memory technology and facilitates further expansion into the global AI chip market.