Establishing an 8-inch GaN epitaxy center in Taiwan to provide researchers with a stable, high-quality environment for fabricating compound semiconductor wafers and devices on silicon or transparent substrates.

Demonstrates the practical application and technical verification of Gallium Nitride (GaN) materials in forward-looking industries such as new energy, high-frequency power systems, and low-earth orbit satellites.

Supports the "Great South New Silicon Valley" initiative by providing high-quality epitaxial wafers, promoting the commercialization of advanced technologies in new energy vehicles, 5G/6G communications, and LEO satellites.