EUV (extreme ultraviolet) reflective mirrors are critical components in advanced lithography systems. The EUV mirror developed by NCIR consists of tens of alternating nanoscale multilayers of molybdenum (Mo) and silicon (Si). These multilayers require ultra-high-precision design and deposition control to form a well-defined periodic structure, enabling high reflectivity. In the future, this technology will be implemented in the optical collection system of NCIR’s standalone EUV wavelength inspection platform, demonstrating its critical value in high-precision optics and advanced semiconductor manufacturing.

The device employs precisely alternating Mo/Si (molybdenum/silicon) multilayer nanostructures, combined with ultra-high-precision deposition and nanoscale surface polishing control. A reflective optical design is adopted to overcome the strong absorption of extreme ultraviolet (EUV) radiation by most materials. This approach achieves a high reflectivity of approximately 70% at a wavelength of 13.5 nm, representing Demonstrating a key breakthrough in nanoscale optical design and process integration.

This technology supports advanced semiconductor EUV lithography processes, serving as a critical optical component for the fabrication of chips at the 5-nanometer node and beyond. It can also be applied to EUV light source inspection, optical calibration, and metrology systems, thereby improving process monitoring accuracy. Furthermore, its high-precision nanoscale multilayer coating and surface control technologies can be extended to high-end precision optics, scientific instrumentation, and extreme ultraviolet (EUV) application equipment. These capabilities demonstrate strong potential for integration into the core semiconductor supply chain and for high-value-added applications.