Photon-Induced Atomic Layer Deposition (PI-ALD) is the world's only technology to incorporate photocatalytic reactions intothin-film deposition, solving the critical trench-filling challenge in advanced processes while enabling precisely controlledarea-selective deposition. Films deposited via PI-ALD achieve lower surface roughness, fewer residual impurities (C, O),lower resistivity, and faster deposition rates.
Thin films deposited via PI-ALD deliver a compelling combination of performance advantages:
- Lower surface roughness for superior film uniformity
- Reduced residual functional-group elements (e.g., carbon and oxygen) for higher film purity
- Lower metallic resistivity for enhan

	Photon-induced chemical reactions and atomic diffusion enable precise control of thin film deposition, eliminating void and seam defects commonly encountered during gap-fill processes
	Photon-induced bond dissociation of precursors and reactants significantly reduces residual functional-group impurities — including carbon (C), oxygen (O), and nitrogen (N) — thereby enhancing film quality and improving properties such as metallic electrical conductivity
	Multi-layer molecular adsorption technology delivers a multiplicative increase in deposition rate, dramatically improving process throughput
	Photon-induced radical-driven chemical deposition eliminates device damage caused by charged ions

Photo-induced ALD uses ultraviolet or visible light to activate precursor reactions, enabling deposition at low temperatures and achieving area-selective growth. Its major industrial applications include: selective deposition and self-aligned patterning in advanced semiconductor processes, and reduced thermal budget to protect temperature-sensitive devices; low-temperature thin-film encapsulation for flexible electronics and OLED displays; as well as photocatalysis, sensors, and transparent conductive films. Its light-controlled spatial and temporal precision aligns well with the demands for precise processing amid the trends toward heterogeneous integration and device scaling.