In this technique, it can synthesize high-qualitylarge area graphene. We develop batch to batch chemical vapor deposition (B2B-CVD) to reduce the cost to facilitate the industrialized production. At the same time, the development of high-quality six-inch graphene silicon wafers  was made with our unique transferring process. The wafer can be used as epitaxial substrates, which can solve the bottleneck of poor heat dissipation of sapphire substrates, lattice mismatch of Si substrates,expensive SiCGaN substrates.

1. Use economical equipment integrated our patented high-density rolling method to achieve scale up synthesis of high qualitylarge-area graphene for  industrialized production. When the reaction chamber diameter reaches 8 inches, the productivity can be increased to 6.7 m2/h, which can reduce the cost. 2. Ultra-high clean transfer printing process, so that the surface cleanliness meets the specifications for making electronic components. 3. The GaN epitaxy process is performed on graphene as the buffer layer on the Si substrate to obtain high-quality crystalline state.

The lattice structure of graphene has a good match with that of GaN,it can be applied to epitaxial fabrication process. If high-quality graphene is transferred onto a silicon wafer for epitaxy, which can replace the conventional sapphire substrate for epitaxy. That can solve the bottlenecks of poor heat dissipation, lattice mismatch,expensive SiCGaN substrates encountered by conventional sapphire substrates. It can produce high-efficiencycost-economic niche components, such as high-power/high-frequency electronic components, microwave components, short-wavelength LED/Laser.

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