The disclosed technology is a metal-organic chemical vapor deposition technology, which enables the epitaxial growth of high quality GaN-based heterostructures on Si substrates. With precise control over the growth parameters and epilayer design, AlGaN HEMTs with electron mobility of 2,040 cm2/V-s and two-dimensional electron gas density of 8.8×1012 cm-2 have been demonstrated on 6 inch Si substrates.

With precise control over the growth parameters, such as growth temperature, reactor pressure, gas flow, type of carrier gas, type of precursor, and special design of the epilayer structure, AlGaN, AlInN, and AlInGaN HEMTs with excellent electron mobility, low sheet resistance, and small wafer bow have been demonstrated on 6 inch Si substrates.

This technology concerns the epitaxy of GaN-based power transistors on Si substrate for power switching and communication applications. Power transistors and RF power amplifiers fabricated on these epitaxial wafers are well suited for high energy efficiency wireless charger, switching power supply, converter, inverter, electrical vehicle, power amplifier for 5G communications, and phased array radar. The global market size are tremendous.