| Technical Name | Three-dimensional transistormethods of manufacturing thereof | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | - | ||
| Summary | With the etching process from side wall, the channel length of device is no longer limited by lithography. |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | |||
- futuretech.most@gmail.com
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