| Technical Name | Field effect transistors methods of forming same | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | - | ||
| Summary | The vertical FET structure is integrated with modern FinFET technology. The device architecture can be realized without process modify. The channel length can be scaled down to 10 nm with current of 2400 A/m. |
||
| Scientific Breakthrough | - |
||
| Industrial Applicability | - |
||
| Keyword | |||
| Notes | |||
- Contact
- futuretech.most@gmail.com
other people also saw