| Technical Name | Semiconductor devicetransistor | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | - | ||
| Summary | By applying the designed gate stack on negative capacitance field effect transistor (NCFET), device with hysteresis-free output characteristicssub-threshold slope ~ 40 mV/decade is achieved. |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | |||
| Notes | |||
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