| Technical Name | Semiconductor device structuremethod for forming the same | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | - | ||
| Summary | With (a) the good device performances of MoS2 transistors with short channel lengths, (b) the low contact resistance of graphene on MoS2(c) the epitaxially grown graphene/MoS2 hetero-structures, we proposed a MoS2 transistor architecture fabricated by using AFM anode oxidation on graphene/MoS2 hetero-structures. With additional gate dielectric layer deposition, both bottom-top- gate devi |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | __- | ||
| Notes | |||
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