| Technical Name | Semiconductor device with transition metal dichalocogenide hetero-structure | ||
|---|---|---|---|
| Project Operator | National Taiwan University | ||
| Project Host | 李嗣涔 | ||
| Summary | The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate a second transition metal dichalcogenide film on the first transition metal dichalcogenide film sourcedrain features formed over the second transition metal dichalcogenide filma first gate stack formed |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | __ | ||
| Notes | |||
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