| Technical Name | Negative capacitance field effect transistor with charged dielectric material | ||
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| Project Operator | National Taiwan University | ||
| Project Host | 李嗣涔 | ||
| Summary | The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a substrate a gate stack over the substrate. The gate stack includes a ferroelectric layer a first dielectric material layera first conductive layer. One of the first dielectric material layerthe ferroelectric layer is electrically charged to form a charged lay |
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| Scientific Breakthrough | - |
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| Industrial Applicability | - |
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| Keyword | |||
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