Technical Name Negative capacitance field effect transistor with charged dielectric material
Operator National Taiwan University
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Technical Description The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a substrate a gate stack over the substrate. The gate stack includes a ferroelectric layer a first dielectric material layera first conductive layer. One of the first dielectric material layerthe ferroelectric layer is electrically charged to form a charged lay
Scientific Breakthrough -
Industrial Applicability -
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