Technical Name Hybrid Complementary Thin Film Transistors for Pixel Device and Periphery Circuit Applications
Project Operator National Chiao Tung University
Project Host 劉柏村
In recent years, flat panel display (FPD) products with high resolution and narrow bezel have become the main-stream development of display technologies. The breakthrough of this research is mainly to break the single-type circuit design mode and to develop the “Hybrid Complementary Thin Film Transistors (HC-TFTs) for Pixel Device and Periphery Circuit Applications”. This research is of technique progress and practicability for the advanced FPD technology.
Scientific Breakthrough
In order to realize System On Panel (SoP) technologies, in the past many research groups have studied the use of different TFTs technology to fabricate inverter circuits with the complementary architecture, called HC-TFTs.  
In this work, the bottleneck of the existing technologies have been overcome. We propose the novel and high-performance N-channel AOS TFTs and P-channel poly-Si TFTs for HC-TFTs applications.
Industrial Applicability
The development of logic circuit unit, inverter, based on HC-TFTs architecture can increase the flexibility in peripheral circuit design, effectively reducing power consumption, circuit layout area, and create powerful/diverse electronic driving systems due to the size match of both of N- and P-channel devices. The proposed HC-TFT technology is thereby highly promising in the applications for advanced FPD and IC industries.
Keyword Amorphous oxide semiconductor (AOS) Low-temperature polycrystalline silicon (LTPS),Nic Nickel Induced Lateral Crystallization (NILC) Complementary metal-oxide-semiconductor (CMOS) Hybrid complementary TFTs (HC-TFTs) Inverter System-on-Panel (SoP) Technology Computer Aided Design (TCAD) Three-dimension integration circuit (3D-IC) junctionless transistors
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