• Technical Name
  • High-performance In0.53Ga0.47As FinFETs using nitrogen-based plasma treatments for RF Applications
  • Operator
  • National Chiao Tung University
  • Booth
  • Online display only
  • Contact
  • 何焱騰
  • Email
  • chia500@nctu.edu.tw
Technical Description We propose advanced nitrogen-based passivation techniques, including plasma-enhanced atomic layer deposition (PEALD) aluminum nitride (AlN)in-situ remote-plasma (RP) treatment using nitrogen (N2) gas,demonstrate the high-performancesufficiently reliable In0.53Ga0.47As FinFETs for radio frequency (RF) applications.
Scientific Breakthrough InGaAs materials are suitable for RF applications, enabling high-frequencylow-noise functionality. However, InGaAs FinFETs inherit low quality of InGaAs surface/interface of fin structures. in this work, we propose an advanced nitrogen-based plasma treatmentsdemonstrate high-performance InGaAs FinFET technology enabling the scaled devices matching the requirements of high-frequency RF ap
Industrial Applicability These InGaAs FinFET technologies with high frequency response can be used for next-generation network systems, communications,aerospace (with frequency signal between 100-340 GHz). It can be integrate with the state-of-the-art Si CMOS used for many THz imaging applications such as medical diagnostic, health treatment, security,sensor systems.
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