"In this work, we demonstrate a new concept for realizing
high threshold voltage (V th ) E-mode GaN power devices with
high maximum drain current (I D,max ). A gate stack ferroelectric
blocking film with charge trap layer, achieved a large positive
shift of V th . The E-mode GaN MIS-HEMTs with high V th of 6
V shows I D,max 720 mA/mm. The breakdown voltage is above
1100 V."

"Negative capacitance InGaAs MOSFETs:
Sub-20 mV/dec (SSrev=11 mV/dec)
Small hysteresis (ΔVth = 0.7 V)"

-