Technical Name Double exponential mechanism controlled transistor
Operator National Taiwan University
Booth Online display only
Technical Description The present disclosure relates to a tunnel FET device with a steep sub-threshold slope,a corresponding method of formation. In some embodiments, the tunnel FET device has a dielectric layer arranged over a substrate. A conductive gate electrodea conductive drain electrode are arranged over the dielectric layer. A conductive source electrode contacts the substrate at a first position loca
Scientific Breakthrough -
Industrial Applicability -
Contact 黃慧嫺
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